1209.4417 (U. Givan et al.)
U. Givan, Z. Ovadyahu
(abridged) We present results of the disorder-induced metal-insulator-transition (MIT) in three-dimensional amorphous indium-oxide films. The amorphous version studied here differs from the one reported earlier [PRB 46, 10917 (1992)] in that it has a much lower carrier concentration. As a measure of the static disorder we use the dimensionless parameter kFl. Thermal annealing is employed as the experimental handle to tune the disorder. On the metallic side of the transition, the low temperature transport exhibits weak-localization and electron-electron correlation effects characteristic of disordered electronic systems. The MIT occurs at a kFl~0.3 for both versions of the amorphous material. However, in contrast with the results obtained on the electron-rich version of this system, no sign of superconductivity is seen down to ~0.3K even for the most metallic sample used in the current study. This demonstrates that using kFl as a disorder parameter for the superconductor-insulator-transition (SIT) is an ill defined procedure. A microstructural study of the films, employing high resolution chemical analysis, gives evidence for spatial fluctuations of the stoichiometry. This brings to light that, while the films are amorphous and show excellent uniformity in transport measurements of macroscopic samples, they contain compositional fluctuations that extend over mesoscopic scales. It is argued that this compositional disorder may be the reason for the apparent violation of the Ioffe-Regel criterion in the two versions of the amorphous indium-oxide. However, more dramatic effects due to this disorder are expected when superconductivity sets in, which are in fact consistent with the prominent transport anomalies observed in the electron-rich version of indium-oxide. The relevance of compositional disorder to other systems near their SIT is discussed.
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http://arxiv.org/abs/1209.4417
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