1211.2871 (C. R. Rotundu et al.)

High pressure effects on single crystals electron-doped cuprate
Pr$_{2-x}$Ce$_{x}$CuO$_{4}$    [PDF]

C. R. Rotundu, V. V. Struzhkin, M. S. Somayazulu, S. Sinogeikin, Russell J. Hemley, R. L. Greene

We present high pressure diamond anvil cell synchrotron X-ray, resistivity, and AC-susceptibility measurements on electron-doped cuprate Pr$_{2-x}$Ce$_{x}$CuO$_{4}$ to much higher pressures than previously reported. At 2.72 GPa between 88 and 98$%$ of the superconducting T$^\prime$ phase \cite{Tprime} of the optimally doped Pr$_{1.85}$Ce$_{0.15}$CuO$_{4}$ transforms into the insulating phase T. The T$_{c}$ of the remaining 2-12$%$ T$^\prime$ phase is suppressed continuously from 22 K to 18.5 K at about 14 GPa. Remarkably, the T$_{c}$ of the over doped Pr$_{1.83}$Ce$_{0.17}$CuO$_{4}$ remains practically unchanged even at 32 GPa. This behavior of the electron-doped cuprate contrasts with that of the hole-doped cuprate for which T$_{c}$ is first substantially enhanced with applied pressure.

View original: http://arxiv.org/abs/1211.2871