P. Probst, A. Semenov, M. Ries, A. Hoehl, P. Rieger, A. Scheuring, V. Judin, S. Wünsch, K. Il'in, N. Smale, Y. -L. Mathis, R. Müller, G. Ulm, G. Wüstefeld, H. -W. Hübers, J. Hänisch, B. Holzapfel, M. Siegel, A. -S. Müller
The photoresponse of YBa2Cu3O7-d thin film microbridges with thicknesses between 15 and 50 nm was studied in the optical and terahertz frequency range. The voltage transients in response to short radiation pulses were recorded in real time with a resolution of a few tens of picoseconds. The bridges were excited by either femtosecond pulses at a wavelength of 0.8 \mu m or broadband (0.1 - 1.5 THz) picosecond pulses of coherent synchrotron radiation. The transients in response to optical radiation are qualitatively well explained in the framework of the two-temperature model with a fast component in the picosecond range and a bolometric nanosecond component whose decay time depends on the film thickness. The transients in the THz regime showed no bolometric component and had amplitudes up to three orders of magnitude larger than the two-temperature model predicts. Additionally THz-field dependent transients in the absence of DC bias were observed. We attribute the response in the THz regime to a rearrangement of vortices caused by high-frequency currents.
View original:
http://arxiv.org/abs/1204.2754
No comments:
Post a Comment