Tuesday, March 12, 2013

1303.2586 (Kazumasa Iida et al.)

Intrinsic pinning and the critical current scaling of clean epitaxial
Fe(Se,Te) thin films
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Kazumasa Iida, Jens Haenisch, Elke Reich, Fritz Kurth, Ruben Huehne, Ludwig Schultz, Bernhard Holzapfel, Ataru Ichinose, Masafumi Hanawa, Ichiro Tsukada, Michael Schulze, Saicharan Aswartham, Sabine Wurmehl, Bernd Buechner
We report on the transport properties of clean, epitaxial Fe(Se,Te) thin films prepared on Fe-buffered MgO (001) single crystalline substrates by pulsed laser deposition. Near Tc a steep slope of the upper critical field for H||ab was observed (74.1 T/K), leading to a very short out-of-plane coherence length, \xi c, of 0.2 nm, yielding 2\xi c(0) approximately 0.4 nm. This value is shorter than the interlayer distance (0.605 nm) between Fe-Se(Te) planes, indicative of modulation of the superconducting order parameter along the c-axis. An inverse correlation between the power law exponent N of the electric field-current density (E-J) curve and the critical current density, Jc, has been observed at 4 K, when the orientation of H was close to the ab-plane. These results prove the presence of intrinsic pinning in Fe(Se,Te). A successful scaling of the angular dependent Jc and the corresponding exponent N can be realized by the anisotropic Ginzburg Landau approach with appropriate \Gamma values 2~3.5. The temperature dependence of \Gamma behaves almost identically to that of the penetration depth anisotropy.
View original: http://arxiv.org/abs/1303.2586

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