1202.1792 (Dale R. Harshman et al.)

Coexisting Holes and Electrons in High-Tc Materials: Implications from
Normal State Transport    [PDF]

Dale R. Harshman, John D. Dow, Anthony T. Fiory

Normal state resistivity and Hall effect are shown to be successfully modeled
by a two-band model of holes and electrons that is applied self-consistently to
(i) DC transport data reported for eight bulk-crystal and six oriented-film
specimens of YBa2Cu3O7-{\delta}, and (ii) far-infrared Hall angle data reported
for YBa2Cu3O7-{\delta} and Bi2Sr2CaCu2O8+{\delta}. The electron band exhibits
extremely strong scattering; the extrapolated DC residual resistivity of the
electronic component is shown to be consistent with the previously observed
excess thermal conductivity and excess electrodynamic conductivity at low
temperature. Two-band hole-electron analysis of Hall angle data suggest that
the electrons possess the greater effective mass.

View original: http://arxiv.org/abs/1202.1792