Ryotaro Inoue, Hideaki Takayanagi, Tatsushi Akazaki, Kazunori Tanaka, Hirotaka Sasakura, Ikuo Suemune
Transport properties of Josephson junction attached to superconductor-based light-emitting diode (superconductor-based LED) are investigated and quantitatively explained. In the gate-controlled region, we confirm the realization of new-type Josephson field effect transistor (JoFET), where the channel cross-sectional area of the junction is directly modulated. In the current-injected region, the energy relaxation process of generated photons in succession to the radiative recombination process causes the conversion of superconducting pairs to quasiparticles in the active layer. Using two-fluid model, we discuss the carrier flows between the active layer and the superconducting electrodes, which takes place for compensating the conversion.
View original:
http://arxiv.org/abs/1304.3315
No comments:
Post a Comment